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Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
10.80.2
7.50.2 3.80.2
4.50.2
Features
* High forward current transfer ratio hFE * Allowing supply with the radial taping
0.650.1 2.50.1
0.850.1 1.00.1 0.8 C
90
0.8 C
16.01.0
0.70.1 0.70.1 1.150.2 1.150.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.5 150 -55 to +150 Unit V V V A A W C C
0.50.1 0.8 C 1 2 3 2.050.2
0.40.1
2.50.2
2.50.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
Internal Connection
B C
E 200
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio *1, 2 Collector-emitter saturation voltage Base-emitter saturation voltage *1 Transition frequency
*1
Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT
Conditions IC = 100 A, IE = 0 IC = 1 mA, IB = 0 IE = 100 A, IC = 0 VCB = 25 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCB = 10 V, IE = -50 mA, f = 200 MHz
Min 120 100 5
Typ
Max
Unit V V V A A V V MHz
0.1 1 4 000 40 000 1.5 2 150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q R S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: February 2003
SJD00269BED
1
2SD2479
PC Ta
1.6 Ta = 25C 4 1.2
IC VCE
1.2 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 2 0.3 mA
IC VBE
VCE = 10 V
Collector power dissipation PC (mW)
Collector current IC (A)
Collector current IC (A)
Ta = 85C 0.8 25C
3
0.8
-25C 0.4
0.4
0.2 mA 1 0.1 mA
0 0 40 80 120 160
0
0
2
4
6
8
10
12
0
0
1
2
3
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VBE(sat) IC
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 1 000
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 1 000
hFE IC
10 000 VCE = 10 V
10
Forward current transfer ratio hFE
8 000 Ta = 85C 6 000 25C 4 000 -25C 2 000
Ta = -25C 25C 1 85C
10
Ta = 85C 25C
1
-25C
0.1
1
10
102
103
104
0.1
1
10
102
103
104
0 1 10
102
103
104
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
1 000 f = 1 MHz Ta = 25C
100
10
0
10
20
30
40
Collector-base voltage VCB (V)
2
SJD00269BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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